Samsung 990 EVO M.2 2TB PCIe 5.0 NVMe Internal SSD MZ-V9E2T0BW
Speed that stays ahead
The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.
Evolved power efficiency
Turn right on and stay on. With a remarkable 70% improvement in power efficiency over the previous model, compute for longer without worrying about battery life. Plus, it supports Modern Standby, letting you stay connected to the internet and still receive notifications even in the low-power state.
Smart thermal solution
The 990 EVO’s heat spreader label helps thermal control of the NAND chip. Samsung’s cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.
Specifications
- Brand: Samsung
- Series: 990 EVO
- Model: MZ-V9E2T0BW
- Drive Capacity: 2TB
- Cache Memory: HMB(Host Memory Buffer)
- Storage Memory: Samsung V-NAND TLC
- Controller: Samsung In-house Controller
- PerformanceInterface: PCIe 4.0 x4 / PCIe 5.0 x2NVMe 2.0
- Random Read Speed (4KB, QD32): Up to 700,000 IOPS
- Random Write Speed (4KB, QD32): Up to 800,000 IOPS
- Random Read Speed (4KB, QD1): Up to 20,000 IOPS
- Random Write Speed (4KB, QD1): Up to 90,000 IOPS
- Sequential Read Speed: 5000 MB/s
- Sequential Write Speed: 4200 MB/s
- Drive Type: SSD
- Form Factor: M.2 2280
Samsung 990 EVO Plus 2TB NVMe SSD – Read Speed up to 5000 MB/s, Write Speed to up 4200 MB/s, Random Read up to 700,000 IOPS, Random Write up to 800,000 IOPS; PCIe 4.0 x4/5.0 x2 NVMe 2.0; V-Nand TLC; In-House Controller; HMB(Host Memory Buffer), 1200 TBW, 1.5 M hours (MTBF) 5 Years Warranty
Exclusive to PackardSA
